HAT2282C Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2282C
Main Characteristics
Power vs. Temperature Derating
1.6
Test Condition :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10
7V
8 _4V
3V
2.6 V
2.4 V
6
2.2 V
2V
4
1.8 V
2
1.6 V
Pulse Test
0
2
4
V_GS = 0 V
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
400
Pulse Test
300
1.5 A
200
0.8 A
100
I_D = 0.5 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.1.00 Jan 26, 2006 page 3 of 6
100
30
10
3
1
0.3
0.1
0.03
Maximum Safe Operation Area
Ta = 25°C,1shot pulse
When using the FR4 board.
10 µs
PW
100 _µs
DC _{opera=tio1n0 ms}
Operation in this area
is limited by R_DS(on)
0.01 _{0.03 0.1 0.3 1 3 10 30 100}
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
8
–25°C
25°C
6
Tc = 75°C
4
2
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
2.5 V
100
V_GS = 4.5 V
10
0.1
Pulse Test
1
10
Drain Current I_D (A)