HAT2281C Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2281C
Static Drain to Source on State Resistance
vs. Temperature
400
Pulse Test
300
200
I_D = 0.5, 1, 2 A ^{2.5 V}
100
V_GS = 4.5 V
I_D = 0.5, 1, 2 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
100
20
I_D = 2 A
80
60 _VDS
V_DD = 50 V
25 V
10 V
16
V_GS
12
40
8
20
V_DD = 50 V
25 V
4
10 V
0
0
2
4
6
8
10
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
10
8
4.5V
6 _2.5V
4
V_GS = 0 V
2
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
3
25°C
75°C
1
0.3
0.1
0.1
0.3
V_DS = 10 V
Pulse Test
1
3
10
Drain Current I_D (A)
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
30
Coss
Crss
10
0 10 20 30 40 50 60
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
tr
100
td(off)
td(on)
10
tf
1
0.1 0.3
V_GS = 4.5 V, V_DD = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
1 3 10 30 100
Drain Current I_D (A)
R07DS1185EJ0300 Rev.3.00
Mar 19, 2014
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