HAT2281C Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2281C
Main Characteristics
Power vs. Temperature Derating
1.6
Test Condition :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10
2.4 V ^{2.3 V}
2.1 V
8
4.5 V
2.2 V
2V
6
4
2
Pulse Test
0
2
4
1.9 V
1.8 V
1.7 V
1.6 V
1.5 V
1.4 V
V_GS = 1.2 V
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
400
Pulse Test
300
200
2A
100
1A
I_D = 0.5 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
R07DS1185EJ0300 Rev.3.00
Mar 19, 2014
Maximum Safe Operation Area
100
Ta = 25°C,1shot pulse
30 ^{When using the FR4 board.}
10
10 μs
3
1
0.3
0.1
0.03
PW
DC
= ₁₀
Operation
ms
Operation in this area
is limited by R_DS(on)
0.01 _{0.03 0.1 0.3 1 3 10 30 100}
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
8
6
4 _{Tc = –25°C}
2
25°C
75°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
2.5 V
100
V_GS = 4.5 V
10
0.1
1
10
Drain Current I_D (A)
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