HAT2281C Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2281C
Electrical Characteristics
Item
Symbol Min
Drain to Source breakdown voltage V_(BR)DSS
60
Gate to Source breakdown voltage V_(BR)GSS ±12
Gate to Source leak current
I_GSS
—
Drain to Source leak current
I_DSS
—
Gate to Source cutoff voltage
V_GS(off)
0.4
Drain to Source on state resistance R_DS(on)
—
R_DS(on)
—
Forward transfer admittance
|y_fs|
3
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Total Gate charge
Qg
—
Gate to Source charge
Qgs
—
Gate to Drain charge
Qgd
—
Turn - on delay time
t_d(on)
—
Rise time
t_r
—
Turn - off delay time
t_d(off)
—
Fall time
t_f
—
Body - Drain diode forward voltage
V_DF
—
Notes: 3. Pulse test
Typ Max
—
—
—
±10
—
1
—
1.4
109
142
126
177
4.5
—
335
—
40
—
20
—
3.6
—
0.6
—
0.7
—
12
—
27
—
36
—
5
—
0.8
1.1
Unit
V
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 μA, V_DS = 0
V_GS = ±10 V, V_DS = 0
V_DS = 60 V, V_GS = 0
V_DS = 10 V, I_D = 1 mA
I_D = 1.0 A, V_GS = 4.5 V^Note3
I_D = 1.0 A, V_GS = 2.5 V^Note3
I_D = 1.0 A, V_DS = 10 V ^Note3
V_DS = 10 V, V_GS = 0,
f = 1 MHz
V_DD = 10 V, V_GS = 4.5 V
I_D = 2.0 A
I_D = 1.0 A
V_GS = 4.5 V, V_DD = 10 V
R_L = 10 Ω, Rg = 4.7 Ω
I_F = 2.0 A, V_GS = 0 ^Note3
R07DS1185EJ0300 Rev.3.00
Mar 19, 2014
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