HAT2240C Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2240C
Static Drain to Source on State Resistance
vs. Temperature
200
160
0.5 A, 1.3 A, 2.5 A
120
V_GS = 2.5 V
80
4.5 V
40
I_D = 0.5 A, 1.3 A, 2.5 A
Pulse Test
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
80
I_D = 2.5 A
8
V_GS
60
V_DD = 50 V
25 V
6
V_DD
10 V
40
4
20
2
V_DD = 50 V
25 V
10 V
0
0
2
4
6
8
10
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage
10
Pulse Test
8
4.5 V
6
2.5 V
4
2
V_GS = 0 V
0
0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
100
Tc = –25°C
10
25°C ^75°C
1
0.1
0.1
V_DS = 10 V
Pulse Test
0.3
1
3
10
Drain Current I_D (A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
V_GS = 0
f = 1 MHz
1000
Ciss
300
100
Coss
30
Crss
10
0 10 20 30 40 50 60
Drain to Source Voltage V_DS (V)
Switching Characteristics
1000
V_GS = 4.5 V, V_DS = 10 V
R_G = 4.7 Ω, Ta = 25°C
tr
100
td(off)
td(on)
10
tf
1
0.1
0.3
1
3
10
Drain Current I_D (A)
R07DS1184EJ0500 Rev.5.00
Mar 19, 2014
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