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HAT2240C Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching
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HAT2240C
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
60
Gate to source breakdown voltage V(BR)GSS ±12
Gate to source leak current
IGSS
—
Drain to source leak current
IDSS
—
Gate to source cutoff voltage
VGS(off)
0.4
Drain to source on state resistance RDS(on)
—
RDS(on)
—
Forward transfer admittance
| yfs |
3.3
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn - on delay time
td(on)
—
Rise time
tr
—
Turn - off delay time
td(off)
—
Fall time
tf
—
Body - drain diode forward voltage
VDF
—
Notes: 3. Pulse test
Typ Max
—
—
—
±10
—
1
—
1.4
75
98
85
119
5
—
590
—
60
—
35
—
6
—
1.2
—
1.4
—
17
—
50
—
41
—
4
—
0.8
1.1
Unit
V
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 μA, VDS = 0
VGS = ±10 V, VDS = 0
VDS = 60 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 1.3 A, VGS = 4.5 VNote3
ID = 1.3 A, VGS = 2.5 VNote3
ID = 1.3 A, VDS = 10 V Note3
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 10 V, VGS = 4.5 V
ID = 2.5 A
ID = 1.3 A
VGS = 4.5 V, VDD = 10 V
RL = 7.7 Ω, Rg = 4.7 Ω
IF = 2.5 A, VGS = 0 Note3
R07DS1184EJ0500 Rev.5.00
Mar 19, 2014
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