HAT2240C Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2240C
Main Characteristics
Power vs. Temperature Derating
1.6
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10
2.2 V
8
2.5 V
10 V
6
Pulse Test
2.1 V
2V
1.9 V
1.8 V
4
1.7 V
1.6 V
2
1.5 V
V_GS = 0 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
400
Pulse Test
300
200
I_D = 2.5 A
100
1.3 A
0.5 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
R07DS1184EJ0500 Rev.5.00
Mar 19, 2014
Maximum Safe Operation Area
100 _{When using the FR4 board.}
1 shot pulse, Ta = 25°C
10
10 μs
1
0.1
0.01
Operation in this area is
limited by R_DS(on)
0.001
0.01 0.1
1
10 100
Drain Source Voltage V_DS (V)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
8
6
4
2
–25°C
25°C
Tc = 75°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
2.5 V
100
V_GS = 4.5 V
10
0.1
1
10
100
Drain Current I_D (A)
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