HAT2205C Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2205C
Static Drain to Source on State Resistance
vs. Temperature
100
80
1.8 V
60
3A
0.5 A
1.5 A
40
2.5 V
0.5, 1.5, 3 A
20 ^{VGS = 4.5 V}
I_D = 0.5, 1.5, 3 A
0
Pulse Test
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
40
8
I_D = 3 A
30
V_DD = 5 V
10 V
6
12 V
20
4
10
2
V_DD = 12 V
10 V
5V
0
0
2
4
6
8
10
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
10
5V
8
2.5 V
6
V_GS = 0, –5 V
4
2
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
100
Tc = –25°C
25°C
10
75°C
1
0.1
0.1
V_DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I_D (A)
1000
300
100
30
10
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
3
V_GS = 0
f = 1 MHz
1
0 2 4 _{6 8} 10 ₁₂
Drain to Source Voltage V_DS (V)
Switching Characteristics
1000
V_GS = 4.5 V, V_DD = 10 V
Rg = 4.7 Ω, Ta = 25°C
100
td(off)
10
td(on)
tr
tf
1
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
R07DS1181EJ0500 Rev.5.00
Mar 19, 2014
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