HAT2205C Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2205C
Main Characteristics
Power vs. Temperature Derating
1.6
Test Condition :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm), Ta = 25°C
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10
5V
2.5 V
8
1.8V
1.6 V
6
4
1.4 V
2
V_GS = 1.2 V
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Pulse Test
3A
100
1.5 A
I_D = 0.5 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
R07DS1181EJ0500 Rev.5.00
Mar 19, 2014
Maximum Safe Operation Area
100
Ta = 25°C,1shot pulse
10 μs _{100 μs When using the FR4 board.}
10
1
0.1
DC ^{PoWper=at1io01nmmss}
Operation in this area
is limited by R_DS(on)
0.01
0.001
0.001 0.01 0.1
1
10 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
–25°C
8
25°C
Tc = 75°C
4
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
1.8 V
100
2.5 V
V_GS = 4.5 V
10
0.1
1
10
100
Drain Current I_D (A)
Page 3 of 6