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HAT2205C Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching | |||
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HAT2205C
Electrical Characteristics
Item
Symbol Min
Drain to Source breakdown voltage V(BR)DSS
12
Gate to Source breakdown voltage V(BR)GSS
±8
Gate to Source leakage current
IGSS
â
Drain to Source leakage current
IDSS
â
Gate to Source cutoff voltage
VGS(th)
0.3
Drain to Source on state resistance RDS(on)
â
RDS(on)
â
RDS(on)
â
Forward transfer admittance
|yfs|
6
Input capacitance
Ciss
â
Output capacitance
Coss
â
Reverse transfer capacitance
Crss
â
Total gate charge
Qg
â
Gate to Source charge
Qgs
â
Gate to Drain charge
Qgd
â
Turn - on delay time
td(on)
â
Rise time
tr
â
Turn - off delay time
td(off)
â
Fall time
tf
â
Body - Drain diode forward voltage
VDF
â
Notes: 3. Pulse test
Typ Max
â
â
â
â
â
±10
â
1
â
1.2
38
50
48
67
65
97
9
â
430
â
72
â
35
â
6
â
0.9
â
0.9
â
9
â
3
â
30
â
3
â
0.8
1.1
Unit
V
V
μA
μA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±10 μA, VDS = 0
VGS = ±6.4 V, VDS = 0
VDS = 12 V, VGS = 0
VDS = 10 V, ID = 1 mA
VGS = 4.5 V, ID = 1.5 A Note3
VGS = 2.5 V, ID = 1.5 A Note3
VGS = 1.8 V, ID = 1.5 A Note3
VDS = 10 V, ID = 1.5 A Note3
VGS = 0, f = 1 MHz,
VDS = 10 V
VGS = 4.5 V, VDS = 10 V,
ID = 3 A
VGS = 4.5 V, ID = 1.5 A,
VDD = 10 V,
RL = 6.7 Ω, Rg = 4.7 Ω
IF = 3 A, VGS = 0 Note3
R07DS1181EJ0500 Rev.5.00
Mar 19, 2014
Page 2 of 6
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