HAT2204C Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2204C
Static Drain to Source On State Resistance
vs. Temperature
100
80
1.8 A
I_D = 3.5 A
60
V_GS = 1.8 V
1A
40
2.5 V
1, 1.8 A ^{3.5 A}
20
4.5 V
1, 1.8, 3.5 A
Pulse Test
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
40
8
I_D = 3.5 A
30
V_DD = 12 V
10 V
20
5V
10
6
VGS
4
V_DD = 12 V
10 V
5V ₂
VDD
0
0
4
8
12 16 20
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage
20
16 ^{5 V}
12
V_GS = 0 , -5 V
8
4
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = −25°C
10
75°C
3
25°C
1
0.3
V_DS = 10 V
0.1
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
10000
3000
1000
300
100
30
10
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
3
1
0 2 4 6 8 10 12
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
100
td(off)
10
tr
td(on)
tf
1
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
R07DS1180EJ0600 Rev.6.00
Mar 19, 2014
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