HAT2204C Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2204C
Main Characteristics
Power vs.Temperature Dreating
1.6
Test condition
When using the glass epoxy
board.(FR4 40 x 40 x 1.6 mm)
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
20
Pulse Test
4.5 V
16
2.5 V
1.8 V
12
1.6 V
8
1.4 V
4
V_GS = 1.2 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
160
Pulse Test
120
I_D = 3.5 A
80
1.8 A
40
1A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
100
30
10
3
1
0.3
0.1
0.03
Maximum Safe Operation Area
100 μs
Ta = 25°C,1 shot pulse
When using the FR4 board.
10 μs
PW
=
1 _ms
10 _ms
Operation in this
area is limited by
R_DS(on)
0.01 0.03 0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
25°C
16
−25°C
12
Tc = 75 °C
8
4
V_DS = 10 V
Pulse Test
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
1000
Drain to Source On State Resistance
vs. Drain Current
Pulse Test
100
10
0.1
V_GS = 1.8 V
2.5 V
4.5 V
1
10
100
Drain Current I_D (A)
R07DS1180EJ0600 Rev.6.00
Mar 19, 2014
Page 3 of 6