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HAT2204C Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching
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HAT2204C
Electrical Characteristics
Item
Symbol Min
Drain to Source breakdown voltage V(BR)DSS
12
Gate to Source breakdown voltage V(BR)GSS
±8
Gate to Source leakage current
IGSS
—
Drain to Source leakage current
IDSS
—
Gate to Source cutoff voltage
VGS(off)
0.3
Drain to Source on state resistance RDS(on)
—
RDS(on)
—
RDS(on)
—
Forward transfer admittance
|yfs|
8.5
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Total Gate charge
Qg
—
Gate to Source charge
Qgs
—
Gate to Drain charge
Qgd
—
Turn - on delay time
td(on)
—
Rise time
tr
—
Turn - off delay time
td(off)
—
Fall time
tf
—
Body - Drain diode forward voltage
VDF
—
Notes: 3. Pulse test
Typ Max
—
—
—
±10
—
1
—
1.2
26
34
34
44
45
69
13
—
770
—
115
—
50
—
9
—
1.5
—
2
—
10
—
9.5
—
36
—
5
—
0.8
1.1
Unit
V
μA
μA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±10 μA, VDS = 0
VGS = ±6.4 V, VDS = 0
VDS = 12 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 1.8 A, VGS = 4.5 VNote3
ID = 1.8 A, VGS = 2.5 VNote3
ID = 1.8 A, VGS = 1.8 VNote3
ID = 1.8 A, VDS = 10 V Note3
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 3.5 A
ID = 1.8 A, VGS = 4.5 V
VDS = 10 V, RL = 5.6 Ω,
Rg = 4.7 Ω
IF = 3.5 A, VGS = 0 Note3
R07DS1180EJ0600 Rev.6.00
Mar 19, 2014
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