HAT2202C_09 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2202C
Static Drain to Source on State Resistance
vs. Temperature
75
60
3A
V_GS = 2.5 V
45
I_D = 1, 1.5 A
30
4.5 V
15
1, 1.5 ,3 A
0
–25 0
Pulse Test
25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
40
I_D = 3 A
30
20 ^VDD
V_DD = 5 V
10 V
20 V
8
V_GS
6
4
10
2
V_DD = 20 V
10 V
5V
0
0
2
4
6
8 10
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
5V
V_GS = 0 V
8
4
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
25°C
3
75°C
1
0.3
0.1
0.1
0.3
V_DS = 10 V
Pulse Test
1
3
10
Drain Current I_D (A)
1000
300
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
100
Crss
30
V_GS = 0
f = 1 MHz
10
0
5
10 15 20 25
Drain to Source Voltage V_DS (V)
Switching Characteristics
100
tr
td(off)
td(on)
10
tf
1
0.1 0.3
V_GS = 4.5 V, V_DD = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
1 3 10 30 100
Drain Current I_D (A)
REJ03G1236-0600 Rev.6.00 Oct 01, 2009
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