HAT2202C_09 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2202C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to Source breakdown voltage V_(BR)DSS
20
—
—
V
I_D = 10 mA, V_GS = 0
Gate to Source breakdown voltage V_(BR)GSS ±12
—
—
V
I_G = ±100 μA, V_DS = 0
Gate to Source leakage current
I_GSS
—
—
±10
μA
V_GS = ± 10V, V_DS = 0
Drain to Source leakage current
I_DSS
—
—
1
μA
V_DS = 20 V, V_GS = 0
Gate to Source cutoff voltage
V_GS(th)
0.4
—
1.4
V
I_D = 10 V, I_D = 1 mA
Drain to Source on state resistance R_DS(on)
—
31
40
mΩ
I_D = 1.5 A, V_GS =4.5 V ^Note3
—
43
55
mΩ
I_D = 1.5 A, V_GS = 2.5 V ^Note3
Forward transfer admittance
|y_fs|
6.5
9.5
—
S
I_D = 1.5 A, V_DS = 10 V ^Note3
Input capacitance
Ciss
—
520
—
pF
V_DS = 10 V, V_GS = 0,
Output capacitance
Coss
—
115
—
pF ^{f = 1 MHz}
Reverse transfer capacitance
Crss
—
60
—
pF
Total gate charge
Gate to Source charge
Qg
—
6
—
nC V_DD = 10 V, V_GS = 4.5 V,
Qgs
—
1
—
nC ^ID ^{= 3 A}
Gate to Drain charge
Qgd
—
1.4
—
nC
Turn - on delay time
t_d(on)
—
Rise time
t_r
—
Turn - off delay time
t_d(off)
—
Fall time
t_f
—
Body - Drain diode forward voltage
V_DF
—
Notes: 3. Pulse test
9
—
8
—
28
—
6
—
0.8
1.1
ns I_D = 1.5 A,
ns
V_GS = 10 V, V_DD =10 V,
ns
R_L= 6.7 Ω, R_g = 4.7 Ω
ns
V
I_F = 3 A, V_GS = 0 ^Note3
REJ03G1236-0600 Rev.6.00 Oct 01, 2009
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