HAT2202C_09 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2202C
Silicon N Channel MOS FET
Power Switching
Features
• Low on-resistance
R_DS(on) = 31 mΩ typ. (at V_GS = 4.5 V)
• Low drive current.
• High density mounting
• 2.5 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband
6
5
4
3
2
1
REJ03G1236-0600
Rev.6.00
Oct 01, 2009
23 45
DD DD
6
G
S
1
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Drain current
Drain peak current
I_D
I_D (pulse)^Note1
Body - Drain diode reverse drain current
Channel dissipation
I_DR
Pch^{Note 2}
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm)
Ratings
20
±12
3
12
3
900
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
REJ03G1236-0600 Rev.6.00 Oct 01, 2009
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