HAT2199R Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2199R
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
40
30
I_D = 2 A, 5 A, 10 A
20 ^VGS ^{= 4.5 V}
10
10 V
2 A, 5 A, 10 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body–Drain Diode Reverse
Recovery Time
100
50
20
di/dt = 100 A/µs
10
0.1
V_GS = 0, Ta = 25°C
1
10
100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
20
I_D = 11 A
40
V_DD = 25 V
10 V
30
5V
16
V_GS
12
20
V_DS
8
V_DD = 25 V
10
10 V ₄
5V
0
0
4
8
12 16 20
Gate Charge Qg (nc)
1000
Forward Transfer Admittance vs.
Drain Current
100
Tc = –25°C
10
25°C
1
75°C
V_DS = 10 V
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30
V_GS = 0
f = 1 MHz
10
0 5 10 15 20 25 30
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
V_GS = 10 V, V_DS = 10 V
Rg = 4.7 Ω, duty < 1 %
100
td(off)
10
tr
1
0.1
td(on)
tf
1
10
100
Drain Current I_D (A)
Rev.3.00, Sep.23.2004, page 4 of 7