HAT2199R Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2199R
Silicon N Channel Power MOS FET
Power Switching
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_DS(on) = 13.0 mΩ typ. (at V_GS = 10 V)
Outline
SOP-8
8 ^{7 65}
4
G
1 ²³⁴
56 7 8
DD D D
SSS
12 3
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
REJ03G0063-0300
Rev.3.00
Sep.23.2004
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
V_DSS
30
Gate to source voltage
V_GSS
±20
Drain current
Drain peak current
I_D
11
I_{D(pulse)Note1}
88
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^Note3
θch-a ^Note3
11
11
12.1
2.0
62.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.3.00, Sep.23.2004, page 1 of 7