HAT2179R_09 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2179R
Typical Capacitance vs.
Drain to Source Voltage
1000
V_GS = 0
f = 1 MHz
Ta = 25°C
Ciss
100
Coss
10
Crss
1
0 50 100 150 200 250 300
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
1.0
V_GS = 0 V
Ta = 25 °C
0.8 ^{Pulse Test}
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage V_SD (V)
Dynamic Input Characteristics (Typical)
800
16
I_D = 0.7 A
V_GS
Ta = 25°C
600
V_DS
400
12
V_DS = 100 V
300 V
8
480 V
200
0
0
4
V_DS = 480 V
300 V
100 V
0
4
8
12 16 20
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V_DS = 10 V
4
3 I_D = 10 mA
1 mA
0.1 mA
2
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1570-0200 Rev.2.00 Jul 17, 2009
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