HAT2179R_09 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2179R
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max Unit
Test conditions
Drain to source breakdown voltage
V_(BR)DSS
600
—
—
V
I_D = 10 mA, V_GS = 0
Zero gate voltage drain current
I_DSS
—
—
1
µA V_DS = 600 V, V_GS = 0
Gate to source leak current
I_GSS
—
—
±0.1
µA V_GS = ±30 V, V_DS = 0
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
V_GS(off)
3.0
—
5.0
|yfs|
0.8
1.2
—
R_DS(on)
—
3.5
4.5
V
V_DS = 10 V, I_D = 1 mA
S
I_D = 0.4 A, V_DS = 10 V ^Note3
Ω
I_D = 0.4 A, V_GS = 10 V ^Note3
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
—
280
—
Coss
—
31
—
Crss
—
3.8
—
pF V_DS = 25 V
pF ^VGS ^{= 0}
pF ^{f = 1 MHz}
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse
recovery time
Notes: 3. Pulse test
t_d(on)
t_r
t_d(off)
t_f
Qg
Qgs
Qgd
V_DF
t_rr
—
24
—
—
15
—
—
50
—
—
58
—
—
10
—
—
1.6
—
—
5.4
—
—
0.8
1.2
—
200
—
ns I_D = 0.4 A
ns ^VGS ^{= 10 V}
ns ^{RL = 750 Ω}
ns ^{Rg = 10 Ω}
nC V_DD = 480 V
nC ^VGS ^{= 10 V}
nC ^{ID = 0.7 A}
V
I_F = 0.7 A, V_GS = 0 ^Note3
ns I_F = 0.7 A, V_GS = 0
di_F/dt = 100 A/µs
REJ03G1570-0200 Rev.2.00 Jul 17, 2009
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