HAT2179R_09 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2179R
Main Characteristics
Maximum Safe Operation Area
10
10 µs
1
PW = 100 µs
0.1
0.01
0.001
Operation in this
area is limited by
R_DS(on)
Ta = 25°C
1 shot
0.0001
0.1
1
10
100 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
2.0
V_DS = 10 V
Pulse Test
1.6
1.2
0.8
Tc = 75°C
0.4
25°C
−25°C
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
10
V_GS = 10 V
Pulse Test
8
I_D = 1.4 A
6
0.7 A
4
0.4 A
2
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Typical Output Characteristics
2.0
6V
1.6
10 V
5.3 V
5.5 V
1.2
V_GS = 5 V
0.8
0.4
Ta = 25°C
Pulse Test
0
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
10
V_GS = 10 V
Ta = 25°C
Pulse Test
3
1
0.1
1
10
Drain Current I_D (A)
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
100
10
0.1
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
1
10
Reverse Drain Current I_DR (A)
REJ03G1570-0200 Rev.2.00 Jul 17, 2009
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