HAT2139H Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2139H
Static Drain to Source on State Resistance
vs. Temperature
35
Pulse Test
30
25
20
15
V_GS = 7 V
10
10 V
5
I_D = 10 A
2 A, 5 A
I_D = 2 A, 5 A, 10 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
di/dt = 50 A/µs
V_GS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
I_D = 20 A
40
30
V_DS
V_DD = 25 V
10 V
5V
20
V_GS
16
12
20
8
10
V_DD = 25 V
4
10 V
5V
0
0
10 20 30 40 50
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
10
Tc = -25°C
1
0.1
0.01
0.01
75°C
25°C
V_DS = 10 V
Pulse Test
0.1
1
10
100
Drain Current I_D (A)
Typical Capacitance vs.
Drain to Source Voltage
10000
V_GS = 0
f = 1 MHz
3000
Ciss
1000
300
100
0
Coss
Crss
10
20
30
40
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
300
100
td(off)
30
td(on)
10 ^tr
tf
3
1
0.1 0.3
V_GS = 10 V , V_DS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
1 3 10 30 100
Drain Current I_D (A)
Rev.5.00 Sep 20, 2005 page 4 of 7