HAT2139H Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2139H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
20
10 V
4.5 V
16
4.2 V
4.0 V
12
3.8 V
8
4
V_GS = 3.5 V
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
400
Pulse Test
300
200
100
I_D = 10 A
5A
2A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.5.00 Sep 20, 2005 page 3 of 7
Maximum Safe Operation Area
1000
100
10
Operation
in
DC
PW
1
100
ms
Opera=ti1o0n _ms
10 _µs
µ_s
this area is
1 limited by R_DS(on)
Tc = 25°C
1 shot Pulse
0.1
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
8
Tc = 75°C
4
25°C
-25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
V_GS = 7 V
10
10 V
5
2
1
1
3
10
30
100
Drain Current I_D (A)