HAT2139H Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2139H
Silicon N Channel Power MOS FET
Power Switching
Features
• Capable of 7 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_DS(on) = 9 mΩ typ. (at V_GS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
1 ²³⁴
5
D
4
G
SSS
123
REJ03G0055-0500
Rev.5.00
Sep 20, 2005
1, 2, 3 Source
4
Gate
5
Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
I_AP ^{Note 3}
E_AR ^{Note 3}
Pch ^Note2
Tch
Tstg
Ratings
40
±20
20
80
20
10
8
15
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.5.00 Sep 20, 2005 page 1 of 7