HAT2099H_05 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2099H
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
12
I_D = 5 A, 10 A ^{20 A}
8
V_GS = 4.5 V
4
10 V
5 A, 10 A, 20 A
0
–40
0
40
80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / µs
V_GS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
20
I_D = 50 A
V_GS
40
16
30 _VDS
20
V_DD = 25 V
10 V ¹²
5V
8
10
V_DD = 25 V
4
10 V
5V
0
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
Tc = –25°C
30
10
75°C
25°C
3
1
0.3
V_DS = 10 V
Pulse Test
0.1
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
300
Crss
100
30
V_GS = 0
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
200
100 _tf
50
td(off)
tr
20
td(on)
10
V_GS = 10 V, V_DS = 10 V
Rg = 4.7 µs, duty ≤ 1 %
5
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I_D (A)
Rev.5.00 Sep 07, 2005 page 4 of 7