HAT2099H_05 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2099H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
4.5 V
40
3.5 V
Pulse Test
30
20
V_GS = 3 V
10
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.20
Pulse Test
0.16
0.12
0.08
I_D = 20 A
0.04
0
0
4
10 A
5A
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.5.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
500
100
10
DCPOWpe=ra1ti01onmm1ss00
10
µ_s
µ_s
Operation in
1 this area is
limited by R_{DS (on)}
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
25°C
20
Tc = 75°C
–25°C
10
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10
V_GS = 4.5 V
5
2
10 V
1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I_D (A)