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| HAT2099H_05 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching | |||
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HAT2099H
Silicon N Channel Power MOS FET
Power Switching
Features
⢠Capable of 4.5 V gate drive
⢠Low drive current
⢠High density mounting
⢠Low on-resistance
RDS (on) = 2.9 m⦠typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
4
G
1234
5
D
S SS
1 23
REJ03G1187-0500
(Previous: ADE-208-1432C)
Rev.5.00
Sep 07, 2005
1, 2, 3
4
5
Source
Gate
Drain
Rev.5.00 Sep 07, 2005 page 1 of 7
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