HAT1108C Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

HAT1108C
Static Drain to Source on State Resistance
vs. Temperature
500
Pulse Test
400
I_D = –1.5 A
300
–4.5 V
–0.5, –0.75 A
200
I_D = –0.5, –0.75, –1.5 A
100 _{VGS = –10 V}
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
0
0
V_DD = –5 V
–10 V
–20 V
–10
V_DD = –5 V ^–4
–10 V
–20 V
–20
–8
V_DS
–30
V_GS
–12
I_D = –1.5 A
–40
0
0.8 1.6 2.4 3.2
Gate Charge Qg (nC)
–16
4
Reverse Drain Current vs.
Source to Drain Voltage
–10
Pulse Test
–8
–6
–10 V
–4
–2
–4.5 V
V_GS = 0, 5 V
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
10
3
Tc = –25°C
1
25°C ^75°C
0.3
0.1
–0.1
–0.3
V_DS = –10 V
Pulse Test
–1
–3
–10
Drain Current I_D (A)
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
Coss
30
Crss
10
0
–10
–20
–30
Drain to Source Voltage V_DS (V)
Switching Characteristics
100
tr
td(off)
30
td(on)
10
3
V_GS = –10 V, V_DS = –10 V
1 ^{RG = 4.7 Ω, Ta = 25°C}
–0.1 –0.3
–1
–3
tf
–10
Drain Current I_D (A)
R07DS1176EJ0600 Rev.6.00
Mar 19, 2014
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