HAT1108C Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

HAT1108C
Main Characteristics
Power vs. Temperature Derating
1.6
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–10
–10 V
–8 V
–8
–6 V
–5.5 V
–5 V
–4.5 V
–6
–4 V
–4
–3.5 V
–3 V
–2
Pulse Test
V_GS = –2 V
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–800
Pulse Test
–600
–400
–200
–1.5 A
–0.75 A
I_D = –0.5 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
R07DS1176EJ0600 Rev.6.00
Mar 19, 2014
Maximum Safe Operation Area
–100
–30 _{10 μs}
–10
When using the FR4 board.
1 shot pulse, Ta = 25°C
100 μs
–3
–1
–0.3
–0.1
–0.03
Operation in this
area is limited by
R_DS(on)
–0.01 –0.03 –0.1 –0.3 –1 –3 –10 –30 –100
Drain Source Voltage V_DS (V)
Typical Transfer Characteristics
–10
V_DS = –10 V
Pulse Test
–8
25°C
–6
–25°C
–4
Tc = 75°C
–2
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
V_GS = –4.5 V
–10 V
100
10
–0.1
Pulse Test
–1
–10
Drain Current I_D (A)
Page 3 of 6