HAT1108C Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

HAT1108C
Electrical Characteristics
Item
Drain to Source breakdown
voltage
Gate to Source breakdown
voltage
Gate to Source leakage current
Drain to Source leakage current
Gate to Source cutoff voltage
Drain to Source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to Source charge
Gate to Drain charge
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Body - Drain diode forward
voltage
Notes: 3. Pulse test
Symbol Min
V_(BR)DSS
–30
V_(BR)GSS
I_GSS
I_DSS
V_GS(th)
R_DS(on)
R_DS(on)
| y_fs |
Ciss
Coss
Crss
Qg
Qgs
Qgd
t_d(on)
t_r
t_d(off)
t_f
V_DF
–20
+10
—
—
–0.5
—
—
0.65
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
155
245
1
160
50
30
3
0.2
0.6
20
13
28
5
–0.85
Max
—
—
±10
–1
–2.0
194
356
—
—
—
—
—
—
—
—
—
—
—
–1.2
Unit
V
V
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
(Ta = 25°C)
Test Conditions
I_D = -10 mA, V_GS = 0
I_G = ±100 μA, V_DS = 0
V_GS = –16/ +8 V, V_DS = 0
V_DS = –30 V, V_GS = 0
I_D = –1 mA, V_DS = –10 V ^Note3
I_D = –0.75A, V_GS = –10 V ^Note3
I_D = –0.75A, V_GS = –4.5 V ^Note3
I_D = –0.75A, V_DS = –10 V ^Note3
V_DS = –10 V, V_GS = 0,
f = 1 MHz
V_DS = –10 V, V_GS = –10 V,
I_D = -–1.5 A
V_DS = –10 V, V_GS = -10 V,
I_D = –0.75 A, R_L = 13.3 Ω,
R_g = 4.7 Ω
I_F = -1.5 A, V_GS = 0
R07DS1176EJ0600 Rev.6.00
Mar 19, 2014
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