FX6KMJ-2 Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX6KMJ-2
Transfer Characteristics (Typical)
–20
Tc = 25°C
VDS = –10V
–16 ^{Pulse Test}
–12
–8
–4
0
0 –2
– 4 – 6 – 8 –10
Gate-Source Voltage V_GS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
2
10³
Ciss
7
5
4
Tch = 25°C
3
f = 1MHz
2
VGS = 0V
10²
7
Coss
5
4
3
Crss
2
–3
–5–7–10⁰
–2 –3
–5–7–10¹
–2 –3
–5–7–10²
–2 –3
Drain-Source Voltage V_DS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
–10
Tch = 25°C
ID = – 6A
–8
–6
–4
VDS =
– 20V
– 50V
– 80V
–2
0
0
4
8
12 16 20
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
10¹
7
5
75°C ^125°C
4 Tc = 25°C
3
2
10⁰
7
5
4
3
2
10^–1_{–7–10–1 –2 –3 –4 –5 –7–100}
VDS = – 5V
Pulse Test
–2 –3 –4 –5 –7
Drain Current I_D (A)
Switching Characteristics (Typical)
5
3
2
10²
7
5
3
2
10¹
7
5_{–10–1}
–2 –3
Tch = 25°C
VGS = –10V
VDD = – 50V
RGEN = RGS = 50Ω
td(off)
tf
td(on)
tr
–5 –7 –10⁰ –2 –3 –5 –7 –10¹
Drain Current I_D (A)
Source-Drain Diode Forward
Characteristics (Typical)
–20
VGS = 0V
Pulse Test
–16
–12
–8
Tc =
25°C
75°C
125°C
–4
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Source-Drain Voltage V_SD (V)
Rev.1.00, Aug.20.2004, page 4 of 6