FX6KMJ-2 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX6KMJ-2
Performance Curves
Drain Power Dissipation Derating Curve
40
32
24
16
8
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
–10
VGS=
Tc = 25°C
–10V _{Pulse Test}
–8
– 5V
– 4V
– 3.5V
–6
– 3V
–4
–2
PD = 20W _{– 2.5V}
0
0
– 4 – 8 –12 –16 –20
Drain-Source Voltage V_DS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
–20
Tc = 25°C
Pulse Test
–16
–12
–8
ID = –12A
–4
00 _–2
– 6A
– 3A
– 4 – 6 – 8 –10
Gate-Source Voltage V_GS (V)
Rev.1.00, Aug.20.2004, page 3 of 6
Maximum Safe Operating Area
–7
–5
–3
–2
–10²
–7
–5
–3
–2
10ms
100µs
tw =
10µs
1ms
–10¹
–7
–5
–3
–2 _{Tc = 25°C}
DC
–10^{0 Single Pulse}
–7
–2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10² –2
Drain-Source Voltage V_DS (V)
Output Characteristics (Typical)
– 5.0
VGS=
– 3V
– 4.0
–10V
– 5V
–3.0
– 4V
– 3.5V
–2.0
PD = 20W
– 2.5V
–1.0
0
0 – 2 – 4 – 6 – 8 –10
Drain-Source Voltage V_DS (V)
On-State Resistance vs.
Drain Current (Typical)
1.0
0.8
VGS = – 4V
–10V
0.6
0.4
0.2
Tc = 25°C
Pulse Test
–010^–1 –2 –3 –5 –7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10²
Drain Current I_D (A)