|
FX6KMJ-2 Datasheet, PDF (2/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE | |||
|
◁ |
FX6KMJ-2
Electrical Characteristics
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Rth(ch-c)
trr
Min.
â100
â
â
â1.0
â
â
â
â
â
â
â
â
â
â
â
â
â
â
Typ.
â
â
â
â1.5
0.46
0.55
â1.38
4.7
1110
108
44
9
8
72
33
â1.0
â
80
Max.
â
±0.1
â0.1
â2.0
0.58
0.72
â1.74
â
â
â
â
â
â
â
â
â1.5
6.25
â
Unit
V
µA
mA
V
â¦
â¦
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
(Tch = 25°C)
Test conditions
ID = â1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = â100 V, VGS = 0 V
ID = â1 mA, VDS = â10 V
ID = â3 A, VGS = â10 V
ID = â3 A, VGS = â 4 V
ID = â3 A, VGS = â10 V
ID = â3 A, VDS = â 5 V
VDS = â10 V, VGS = 0 V,
f = 1MHz
VDD = â 50 V, ID = â3 A,
VGS = â10 V,
RGEN = RGS = 50 â¦
IS = â3 A, VGS = 0 V
Channel to case
IS = â 6 A, dis/dt = 100 A/µs
Rev.1.00, Aug.20.2004, page 2 of 6
|
▷ |