FS10VS-9A Datasheet, PDF (4/7 Pages) Renesas Technology Corp – High-Speed Switching Use Nch Power MOS FET

FS10VS-9A
Transfer Characteristics (Typical)
20
Tc = 25°C
VDS = 10V
16
Pulse Test
12
8
4
0
0
4
8 12 16 20
Gate-Source Voltage V_GS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
3
2
Ciss
10³
7
5
3
2
10²
Coss
7
5
3
2
10^{1 Tch = 25°C}
7 ^{f = 1MHz}
5 V_GS = 0V
Crss
3
23
5 710⁰
23
5 710¹
23
5 710²
23
Drain-Source Voltage V_DS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
20
Tch = 25°C
ID = 10A
16
12
VDS = 100V
200V
8
400V
4
0
0 20 40 60 80 100
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
10²
7
5
3
2
10¹
7
5
3
2
10⁰
7
5
3
2
10^-₁¹_0-1
23
Tc = 25°C
75°C
125°C
5 7 10⁰
VDS = 10V
Pulse Test
2 3 5 7 10¹
Drain Current I_D (A)
Switching Characteristics (Typical)
5
3
2
td(off)
10²
7
5
tf
3
td(on)
2
tr
10¹ _{Tch = 25°C, VDD = 200V}
7 _{VGS = 10V, RGEN = RGS = 50Ω}
150^-1 2 3 5 7 10⁰ 2 3 5 7 10¹
Drain Current I_D (A)
Source-Drain Diode Forward
Characteristics (Typical)
40
32
Tc = 125°C
24
75°C
16
25°C
8
VGS = 0V
Pulse Test
0
0 0.8 1.6 2.4 3.2 4.0
Source-Drain Voltage V_SD (V)
Rev.1.00, Aug.20.2004, page 4 of 6