FS10VS-9A Datasheet, PDF (3/7 Pages) Renesas Technology Corp – High-Speed Switching Use Nch Power MOS FET

FS10VS-9A
Performance Curves
Drain Power Dissipation Derating Curve
120
100
80
60
40
20
0
0
50
100 150 200
Case Temperature Tc (°C)
Output Characteristics (Typical)
20
6V
Tc = 25°C
Pulse Test
16
VGS = 20V,10V,8V
12
8
5V
4
PD = 100W
0
0 10 20 30 40 50
Drain-Source Voltage V_DS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
40
Tc = 25°C
Pulse Test
32
24
16
ID = 15A
8
10A
5A
0
0
4
8 12 16 20
Gate-Source Voltage V_GS (V)
Rev.1.00, Aug.20.2004, page 3 of 6
Maximum Safe Operating Area
10²
7
5
3
2
tw =10µs
10¹
7
5
100µs
3
2
10⁰
1ms
7
5
3
2
Tc = 25°C
Single Pulse
DC
10^-1_{100 2 3 5 7101 2 3 5 7102 2 3 5 7103}
Drain-Source Voltage V_DS (V)
Output Characteristics (Typical)
10
PD = 100W
8
VGS = 20V,10V,
8V,6V
5V
6
4
2
Tc = 25°C
Pulse Test
0
0
4
8 12 16 20
Drain-Source Voltage V_DS (V)
On-State Resistance vs.
Drain Current (Typical)
2.0
Tc = 25°C
Pulse Test
1.6
1.2
VGS = 10V
20V
0.8
0.4
010_{-1 2 3 5 7100 2 3 5 7101 2 3 5 7102}
Drain Current I_D (A)