FS10VS-9A Datasheet, PDF (1/7 Pages) Renesas Technology Corp – High-Speed Switching Use Nch Power MOS FET

FS10VS-9A
High-Speed Switching Use
Nch Power MOS FET
Features
• Drive voltage : 10 V
• V_DSS : 450 V
• r_{DS(ON) (max)} : 0.73 Ω
• I_D : 10 A
Outline
LDPAK(S)-1
4
123
2, 4
1
REJ03G0268-0100
Under development
Rev.1.00
Aug.20.2004
1. Gate
2. Drain
3. Source
4. Drain
3
Applications
DC-DC, PDP, lamp ballast, etc.
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
V_DSS
V_GSS
I_D
I_DM
I_DA
P_D
Tch
Tstg
—
Ratings
450
±30
10
30
10
100
– 55 to +150
– 55 to +150
1.2
(Tc = 25°C)
Unit
Conditions
V
V_GS = 0 V
V
V_DS = 0 V
A
A
A
L = 200 µH
W
°C
°C
g
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6