BCR20KM Datasheet, PDF (4/12 Pages) Renesas Technology Corp – MITSUBISHI SEMICONDUCTOR TRIAC

Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
10²
7
5
3
2 VGM = 10V
PGM = 5W
10¹
7
5
3 _{VGT = 1.5V}
2
PG(AV) =
0.5W
IGM =
10⁰
2A
7
5
IFGT I, IRGT I, IRGT III
3
2
VGD = 0.2V
10^–₁¹ _{01 2 3 5 7102 2 3 5 7103 2 3 5 7104}
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
40
30 360°
CONDUCTION
RESISTIVE,
INDUCTIVE
20 _LOADS
10
0
0 5 10 15 20 25 30
RMS ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10³
TYPICAL EXAMPLE
7
5
3
2
10² IFGT I
7
5
3
2
IRGT I
IRGT III
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
10² 2 3 5 710³ 2 3 5 710⁴ 2 3
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10^–1 2 3 5 710⁰ 2 3 5 710¹ 2 3 5 710²
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140 ^{OF CONDUCTION ANGLE}
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 _INDUCTIVE
LOADS
0
0 5 10 15 20 25 30
RMS ON-STATE CURRENT (A)
Mar. 2002