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| BCR20KM Datasheet, PDF (11/12 Pages) Renesas Technology Corp – MITSUBISHI SEMICONDUCTOR TRIAC | |||
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The product guaranteed maximum junction
temperature 150°C (See warning.)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 125°C)
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
100
III QUADRANT
80
60
40
I QUADRANT
20
0
101 2 3 5 7102 2 3 5 7103 2 3 5 7104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
MITSUBISHI SEMICONDUCTOR â©TRIACâª
BCR20KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 150°C)
160
TYPICAL EXAMPLE
140
Tj = 150°C
120
100
80
III QUADRANT
60
40
I QUADRANT
20
0
101 2 3 5 7102 2 3 5 7103 2 3 5 7104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
(Tj = 125°C)
102
7
5
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
3 VOLTAGE
2
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
Ï = 500µs
VD = 200V
101
f = 3Hz
7
5 MINIMUM
CHARAC-
3 TERISTICS
2 VALUE
III QUADRANT
I QUADRANT
100
7
3 5 7 101
2 3 5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
7
TYPICAL EXAMPLE
5
3
2 IFGT I
IRGT I
IRGT III
102
7
5
3
2
101
100 2 3 5 7 101 2 3 5 7 102
GATE TRIGGER PULSE WIDTH (µs)
COMMUTATION CHARACTERISTICS
(Tj = 150°C)
102
7
5
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
3 VOLTAGE
2
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
TYPICAL
EXAMPLE
Tj = 150°C
IT = 4A
Ï = 500µs
VD = 200V
101
I QUADRANT f = 3Hz
7
5
III QUADRANT
3
2
100
7
3
5 7 101
MINIMUM
CHARAC-
TERISTICS
VALUE
2 3 5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
Mar. 2002
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