BCR20KM Datasheet, PDF (2/12 Pages) Renesas Technology Corp – MITSUBISHI SEMICONDUCTOR TRIAC

Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
BCR20KM
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
φ 3.2 ± 0.2
2.54 ± 0.25
1.1 ± 0.2
E ^{1.1 ± 0.2}
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
q IT (RMS) ................................................................ 20A
q VDRM ................................................................. 600V
q IFGT !, IRGT ! , IRGT # .................................... 20mA
q Viso ................................................................. 2000V
q UL Recognized: Yellow Card No.E80276(N)
File No. E80271
➀➁➂
✽ Measurement point of
case temperature
➁
➀ T1 TERMINAL
➁ T2 TERMINAL
➂ ➂ GATE TERMINAL
➀
TO-220FN
APPLICATION
Vacuum cleaner, light dimmer, copying machine, other control of motor and heater
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
12
VDRM
Repetitive peak off-state voltage^✽1
600
V
VDSM
Non-repetitive peak off-state voltage^✽1
720
V
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I^2t
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV) Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
— Weight
Viso
Isolation voltage
✽1. Gate open.
Conditions
Ratings
Unit
Commercial frequency, sine full wave 360° conduction, Tc=85°C
20
A
60Hz sinewave 1 full cycle, peak value, non-repetitive
200
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
167
A²s
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
5
W
0.5
W
10
V
2
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
2000
V
Mar. 2002