BCR10PM_15 Datasheet, PDF (4/14 Pages) Renesas Technology Corp – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
BCR10PM
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
5.2
Dimensions
in mm
2.8
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
1.3 MAX
0.8
• IT (RMS) ...................................................................... 10A
• VDRM ....................................................................... 600V
• IFGT !, IRGT !, IRGT # ............................................ 20mA
• Viso ........................................................................ 2000V
• UL Recognized: Yellow Card No.E80276(N)
File No. E80271
2.54
2.54
0.5
2.6
123
∗ Measurement point of
case temperature
2
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1
TO-220F
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit, hair drier,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, small motor control,
copying machine, electric tool, solenoid drivers, other general purpose control applications
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
12
VDRM
Repetitive peak off-state voltage ^✽1
600
V
VDSM
Non-repetitive peak off-state voltage ^✽1
720
V
Symbol
IT (RMS)
ITSM
I^2t
Parameter
RMS on-state current
Surge on-state current
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
Viso
Isolation voltage
✽1. Gate open.
Conditions
Ratings
Unit
Commercial power frequency, sine full wave 360° conduction, Tc=85°C
10
A
60Hz sinewave 1 full cycle, peak value, non-repetitive
100
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
41.6
A²s
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
5
W
0.5
W
10
V
2
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
2000
V
Mar. 2002