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BCR10PM_15 Datasheet, PDF (11/14 Pages) Renesas Technology Corp – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
◁
The product guaranteed maximum junction
temperature 150°C (See warning.)
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
5
3
2 VGM = 10V
101
7
PG(AV) =
5
0.5W
3
2
VGT = 1.5V
PGM = 5W
IGM = 2A
100
7
5
3
2
IRGT I IFGT I, IRGT III
10–1
7
VGD = 0.1V
5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140 160
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
103
7
5
NO FINS
3
2
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
1012 3 5 71022 3 5 71032 3 5 71042 3 5 7 105
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
3
IRGT I, IRGT III
2
102
IFGT I
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140 160
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
102 2 3 5 7 103 2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
16
14
12 360°
CONDUCTION
10 RESISTIVE,
INDUCTIVE
8 LOADS
6
4
2
0
0 2 4 6 8 10 12 14 16
RMS ON-STATE CURRENT (A)
Mar. 2002
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