BCR10PM_15 Datasheet, PDF (13/14 Pages) Renesas Technology Corp – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

The product guaranteed maximum junction
temperature 150°C (See warning.)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120140 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 150°C)
160
TYPICAL EXAMPLE
140
Tj = 150°C
120
100
80
60
40
III QUADRANT
20
I QUADRANT
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s)
COMMUTATION CHARACTERISTICS
(Tj = 150°C)
7
5
SUPPLY
VOLTAGE
MAIN CURRENT
3
MAIN
2 ^VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
TYPICAL
EXAMPLE
Tj = 150°C
IT = 4A
τ = 500µs
10¹
VD = 200V
f = 3Hz
7
5
I QUADRANT
III QUADRANT
3
2
MINIMUM
CHARAC-
10⁰
7
10⁰
23
TERISTICS
VALUE
5 7 10¹ 2 3 5 7 10²
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 125°C)
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
100
80
60
III QUADRANT
40
20
I QUADRANT
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s)
COMMUTATION CHARACTERISTICS
(Tj = 125°C)
7
5
SUPPLY
VOLTAGE
MAIN CURRENT
3
MAIN
2 ^VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
10¹
7 MINIMUM
VD = 200V
f = 3Hz
5 CHARAC-
TERISTICS
3 _VALUE
I QUADRANT
2
III QUADRANT
10⁰
7
10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10³
TYPICAL EXAMPLE
7
5
IFGT I
4
3
IRGT I
2
IRGT III
10²
7
5
4
3
2
10¹
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
GATE CURRENT PULSE WIDTH (µ s)
Mar. 2002