3SK317 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

3SK317
Noise Figure vs. Drain Current
5
V_DS = 6 V
4
V_G2S = 3 V
f = 200 MHz
3
2
1
0
4
8
12 16 20
Drain Current I_D (mA)
Noise Figure vs. Drain to Source Voltage
5
V_G2S = 3 V
4
I_D = 10 mA
f = 200 MHz
3
2
1
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Noise Figure vs. Drain Current
5
4
3
2
1
V_DS = 6 V
V_G2S = 3 V
f = 900 MHz
0
4
8
12
16 20
Drain Current I_D (mA)
Power Gain vs. Drain to Source Voltage
50
V_G2S = 3 V
40
I_D = 10 mA
f = 200 MHz
30
20
10
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Power Gain vs. Drain Current
20
16
12
8
V_DS = 6 V
V_G2S = 3 V
4
f = 900 MHz
0
4
8
12 16 20
Drain Current I_D (mA)
Power Gain vs. Drain to Source Voltage
20
16
12
8
V_G2S = 3 V
4
I_D = 10 mA
f = 900 MHz
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Rev.2.00 Aug 10, 2005, page 4 of 6