3SK317 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

3SK317
Silicon N-Channel Dual Gate MOS FET
UHF / VHF RF Amplifier
Features
• Low noise characteristics;
(NF = 1.0 dB typ. at f = 200 MHz)
• High power gain characteristics;
(PG = 27.6 dB typ. at f = 200 MHz)
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
3
Note: Marking is “ZR-“.
1
4
REJ03G1247-0200
(Previous: ADE-208-778)
Rev.2.00
Aug. 10, 2005
1. Source
2. Gate1
3. Gate2
4. Drain
Rev.2.00 Aug 10, 2005, page 1 of 6