3SK317 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

3SK317
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
14
±8
±8
25
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS 14
Gate1 to source breakdown voltage V_(BR)G1SS ±8
Gate2 to source breakdown voltage V_(BR)G2SS ±8
Gate1 to source cutoff current
I_G1SS
—
Gate2 to source cutoff current
I_G2SS
—
Gate1 to source cutoff voltage
V_G1S(off)
0
Gate2 to source cutoff voltage
V_G2S(off)
0
Drain current
I_DS(op)
4
Forward transfer admittance
|y_fs|
20
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Power gain
Noise figure
Noise figure
Ciss
2.4
Coss
0.8
Crss
—
PG
24
NF
—
PG
12
NF
—
NF
—
Typ Max
—
—
—
—
—
—
—
±100
—
±100
0.2
1
0.3
1
8
14
25
—
3.1
3.5
1.1
1.4
0.021 0.04
27.6
—
1.0
1.5
15.6
—
3
4
2.7
3.5
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
dB
dB
dB
(Ta = 25°C)
Test Conditions
I_D = 200 µA , V_G1S = V_G2S = –3 V
I_G1 = ±10 µA, V_G2S = V_DS = 0
I_G2 = ±10 µA, V_G1S = V_DS = 0
V_G1S = ±6 V, V_G2S = V_DS = 0
V_G2S = ±6 V, V_G1S = V_DS = 0
V_DS = 10 V, V_G2S = 3 V,
I_D = 100 µA
V_DS = 10 V, V_G1S = 3 V,
I_D = 100 µA
V_DS = 6 V, V_G1S = 0.75 V,
V_G2S = 3 V
V_DS = 6 V, V_G2S = 3 V
I_D = 10 mA, f = 1 kHz
V_DS = 6 V, V_G2S = 3 V,
I_D = 10 mA, f = 1 MHz
V_DS = 6 V, V_G2S = 3 V,
I_D = 10 mA , f = 200 MHz
V_DS = 6 V, V_G2S = 3 V,
I_D = 10 mA, f = 900 MHz
V_DS = 6 V, V_G2S = 3 V
I_D = 10 mA, f = 60 MHz
Rev.2.00 Aug 10, 2005, page 2 of 6