3SK300 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

3SK300
Noise Figure vs. Drain Current
5
V_DS = 6 V
4
V_G2S = 3V
f = 200MHz
3
2
1
0
4
8
12 16 20
Drain current I_D (mA)
Noise Figure vs. Drain to Source Voltage
5
V_G2S = 3V
4
I_D = 10mA
f = 200MHz
3
2
1
0
2
4
6
8
10
Drain to source voltage V_DS (V)
Noise Figure vs. Drain Current
5
4
3
2
1
V_DS = 6V
V_G2S = 3V
f = 900MHz
0
4
8
12 16 20
Drain current I_D (mA)
Power Gain vs. Drain to Source Voltage
50
V_G2S = 3V
I_D = 10mA
40
f = 200MHz
30
20
10
0
2
4
6
8 10
Drain to source voltage V_DS (V)
Power Gain vs. Drain Current
20
16
12
8
V_DS = 6V
V_G2S = 3V
4
f = 900MHz
0
4
8
12 16 20
Drain current I_D (mA)
Power Gain vs. Drain to Source Voltage
20
16
12
8
V_G2S = 3V
4
I_D = 10mA
f = 900MHz
0
2
4
6
8
10
Drain to source voltage V_DS (V)
Rev.3.00 Aug 10, 2005 page 4 of 6