3SK300 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

3SK300
Absolute Maximum Ratings
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
14
±8
±8
25
150
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Drain to source breakdown voltage
V_(BR)DSX
14
Gate 1 to source breakdown voltage V_(BR)G1SS ±8
Gate 2 to source breakdown voltage V_(BR)G2SS ±8
Gate 1 cutoff current
I_G1SS
—
Gate 2 cutoff current
I_G2SS
—
Drain current
I_DS(op)
4
Gate 1 to source cutoff voltage
V_G1S(off)
0
Gate 2 to source cutoff voltage
V_G2S(off)
0
Forward transfer admittance
|y_fs|
20
Input capacitance
Output capacitance
Ciss
2.4
Coss
0.8
—
—
—
—
—
—
— ±100
— ±100
8
14
+0.2 +1.0
+0.3 +1.0
25
—
3.1
3.5
1.1
1.4
V I_D = 200 µA, V_G1S = –3 V,
V_G2S = –3 V
V
I_G1 = ±10 µA, V_DS = V_G2S = 0
V
I_G2 = ±10 µA, V_DS = V_G1S = 0
nA V_G1S = ±6 V, V_DS = V_G2S = 0
nA V_G2S = ±6 V, V_DS = V_G1S = 0
mA V_DS = 6 V, V_G1S = 0.75 V,
V_G2S = 3 V
V V_DS = 10 V, V_G2S = 3 V,
I_D = 100 µA
V V_DS = 10 V, V_G1S = 3 V,
I_D = 100 µA
ms V_DS = 6 V, V_G2S = 3 V,
I_D = 10 mA, f = 1 kHz
pF V_DS = 6 V, V_G2S = 3 V,
pF ID = 10 mA, f = 1 MHz
Reverse transfer capacitance
Crss
— 0.021 0.04 pF
Power gain
Noise figure
PG
24 27.6 —
dB V_DS = 6 V, V_G2S = 3 V,
NF
—
1.0
1.5
dB ID = 10 mA, f = 200 MHz
Power gain
Noise figure
PG
12 15.6 —
dB V_DS = 6 V, V_G2S = 3 V,
NF
—
3.0
4.0
dB ID = 10 mA, f = 900 MHz
Noise figure
NF
—
2.7
3.5
dB V_DS = 6 V, V_G2S = 3 V,
I_D = 10 mA, f = 60 MHz
Rev.3.00 Aug 10, 2005 page 2 of 6