3SK300 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

3SK300
Silicon N Channel Dual Gate MOS FET
UHF / VHF RF Amplifier
Features
• Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
• High gain
PG = 27.6 dB typ. at f = 200 MHz
REJ03G0818-0300
(Previous ADE-208-449A)
Rev.3.00
Aug.10.2005
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
3
Note: Marking is “ZR–“
2
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Rev.3.00 Aug 10, 2005 page 1 of 6