2SK1880 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1880(L), 2SK1880(S)
Static Drain to Source on State
Resistance vs. Temperature
20
16
12
I_D = 1 A
8
4
0.5 A
–40 0 40 80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
5000
2000
1000
di/dt = 100 A/µs
V_GS = 0
Ta = 25°C
Pulse Test
500
200
100
50
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
1000
800
I_D = 1.5 A
600
V_DS
400
20
V_GS
16
V_DD = 100 V
250 V
400 V ¹²
8
200
V_DD = 100 V
4
250 V
400 V
0
0
4
8 12 16 20
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
5
Pulse Test
2 ^{VDS = 20 V}
Tc = –25°C
1
0.5
75°C
0.2
25°C
0.1
0.05
0.02 0.05 0.1 0.2 0.5 1 2
Drain Current I_D (A)
1000
100
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
Ciss f = 1 MHz
Coss
10
Crss
1
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = 10 V, V_DD = 30 V
PW = 2 µs, duty ≤ 1 %
200
100
50
td(off)
tf
20 ^tr
td(on)
10
5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 7