2SK1880 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1880(L), 2SK1880(S)
Main Characteristics
Power vs. Temperature Derating
30
20
10
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
2.0
10 V
1.6
5 V ^{Pulse Test}
4.5 V
1.2
0.8
4V
0.4
V_GS = 3.5 V
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
12
I_D = 1.5 A
8
1A
4
0.5 A
0
4
8 12 16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
10
3
1
DC
1
100
ms
10
µ_s
µ_s
0.3
0.1
0.03
Operation _{(Tc = 25°C)}
Ta = 25°C
0.01
0.1 0.3 1 3 10 300 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
2.0
Pulse Test
1.6 ^{VDS = 20 V}
1.2
0.8
75°C
Tc = 25°C
0.4
–25°C
0
2
4
6
8 10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
100
50 ^{Pulse Test}
20
10
V_GS = 10 V
5
2
1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)